Absorb ing Layer Fig. 2. Reﬂection ratio as a function of the thickness of the absorbing layer for different functions of the absorption coefficient.
Simple absorbing boundary conditions for wave simulations with Smoothed Particle Hydrodynamics
Curve showing in semi-logarithmic scale the variation of the absorption coefficient according to the energy for the calculation of Eu from Urbach law .
On the Structural and Optical Properties of Sputtered Hydrogenated Amorphous Silicon Thin Films
The diffusion length of electron-hole pairs in Ge exceeds 0.4 mm,15, 16 so that reabsorption cannot be neglected, and since the absorption coefficient is higher for 0.8 eV than for 0.7 eV photons, the observed direct gap PL is preferentially suppressed.
Direct vs. indirect optical recombination in Ge films grown on Si substrates